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MBR20100

Part Number	MBR20100
Manufacturer	Inchange Semiconductor
Description	Schottky Barrier Rectifier
Published	Nov 11, 2016
Detailed Description	Schottky Barrier Rectifier INCHANGE Semiconductor MBR20100 FEATURES ·Metal of silicon rectifier, majonty carrier condu...
Datasheet	MBR20100 PDF File

Overview

Schottky Barrier Rectifier INCHANGE Semiconductor MBR20100 FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MAXIMUN RATINGS ·Operating Temperature: -55C to +150C ·Storage Temperature: -55C to +150C ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 135℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 100 70 20 150 V V A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark Schottky Barrier Rect...

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