Part Number MJ431
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Voltage- : VCEX = 400V(Min) ·DC Current Gain- : hFE= 15-35@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performan...
Features ONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2.5A; IB= 0.5A VCB=400V; IE= 0 VCB=400V; IE= 0;TC=...

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MJ431 : MCC )HDWXUHV • • •   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MJ413 MJ423 MJ431  High Collector-Emitter Voltage VCES=400V DC Current Gain Specified 3.5A High Frequency Response to 2.5 MHz 10 Amp NPN Silicon Power Transistors 125W TO-3 E A N C 0D[LPXP5DWLQJV • • • Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance: 1.0 /W junction to case : Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Symbol VCEX VCB VEB IC Max 400 400 5.0 10 2.0 125 1.0 Unit Vdc Vdc U D K Vdc Adc Adc Watts.

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