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MJB41C

Part Number	MJB41C
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 11, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Electrically the s...
Datasheet	MJB41C PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP41 series ·Pb-free package are available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICP Collector Current-Pulse 10 A IB Base Current PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 2 W 65 W -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ MJB41C isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO * Collector-Em...

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