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MJE182G

Part Number	MJE182G
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 11, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE182G DESCRIPTION ·Collector–Emitt...
Datasheet	MJE182G PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE182G DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 80 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.
5 A = 12(Min) @ IC= 1.
5 A ·Complement to the PNP MJE172G ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 3A ICM Collector Current-peak 6A IB Base Current Collect...

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