DatasheetsPDF.com

IRFZ34A

Part Number	IRFZ34A
Manufacturer	Fairchild Semiconductor
Description	Power MOSFET
Published	Nov 13, 2016
Detailed Description	$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
Datasheet	IRFZ34A PDF File

Overview

$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 60V ♦ Lower RDS(ON): 0.
030Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear ...

Similar Datasheet

IRFZ30 (IRFZ30 / IRFZ32) N-Channel Power MOSFET - International Rectifier
IRFZ30 (IRFZ30 / IRFZ34) N-Channel Power MOSFET - Samsung Electronics
IRFZ30 (IRFZ30 / IRFZ32) Power Field Effect Transistors - Motorola
IRFZ32 (IRFZ30 / IRFZ32) N-Channel Power MOSFET - International Rectifier
IRFZ32 (IRFZ30 / IRFZ32) Power Field Effect Transistors - Motorola
IRFZ34 Power MOSFET - Fairchild Semiconductor
IRFZ34 (IRFZ30 / IRFZ34) N-Channel Power MOSFET - Samsung Electronics
IRFZ34 Power MOSFET - International Rectifier
IRFZ34 Power MOSFET - Vishay
IRFZ34A Power MOSFET - Fairchild Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)