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KTB2510

Inchange Semiconductor
Part Number KTB2510
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published Nov 14, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Coll...
Datasheet PDF File KTB2510 PDF File

KTB2510
KTB2510

Overview
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification KTB2510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.
5V(Max) @IC= -7A ·High DC Current Gain : hFE= 5000(Min) @ IC= -7A, VCE= -4V ·Complement to Type KTD1510 APPLICATIONS ·High power amplifier applications ·Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current-Continuous PC Collector Pow...


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