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KTC1003

Part Number	KTC1003
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Nov 14, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Large Collector Current Capability- : IC= 4A (Max) ·Collector Power Dissi...
Datasheet	KTC1003 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Large Collector Current Capability- : IC= 4A (Max) ·Collector Power Dissipation- : PC= 30W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTC1003 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) C...

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