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BDY25B

Inchange Semiconductor
Part Number BDY25B
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 15, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Collector-Em...
Datasheet PDF File BDY25B PDF File

BDY25B
BDY25B

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.
) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
6V(Max)@ IC = 2A ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for LF signal powe amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A PC Collector Power Dissipation@TC=25℃ 87.
5 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.
0 ℃/W BDY25B isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYM...


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