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BDY20

Inchange Semiconductor
Part Number BDY20
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 26, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collec...
Datasheet PDF File BDY20 PDF File

BDY20
BDY20

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
1V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base Current 7 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
52 ℃/W BDY20 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.
3A VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V ICEO Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Current VCE= 30V; IB=0 VCE= 100V; VBE(off)= 1.
5V VCE= 100V; VBE(off)= 1.
5V,TC=150℃ VEB= 7.
0V; IC=0 hFE-1 DC Current Gain IC= 4A ; VCE= 4V hFE-2 Is/b fT DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product IC= 10A ; VCE= 4V VCE= 40V,t= 1.
0s,Nonrepetitive IC= 0.
5A ; VCE= 10V BDY20 MIN MAX UNIT 60 V 1.
1 V 3.
0 V 1.
5 V 0.
7 mA 1.
0 5.
0 mA 5.
0 mA 20 70 5 2.
87 A 1 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications o...


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