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2SC4461

Part Number 2SC4461
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High Breakdown Voltage- : V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device...
Features tage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 12A; IB= 2.4A VBE(sat) Base-Emitter Saturation Voltage IC= 12A; IB= 2.4A ICBO Collector Cutoff Current VCB=...

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2SC4460 : www.DataSheet.co.kr Ordering number:EN3331 NPN Triple Diffused Planar Silicon Transistor 2SC4460 500V/15A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4460] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VC.

2SC4460 : TO-3P NPN 。Silicon NPN transistor in a TO-3P Plastic Package.  / Features ,,,。 High breakdown voltage ,high reliability, Fast switching speed, Wide ASO. / Applications 。 Switching regulator applications. / Equivalent Circuit / Pinning PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC4460 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Peak Collector Current Base Current Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Ran.

2SC4460 : ·High Breakdown Voltage- : V(BR)CEO= 500V(Min) ·Fast Switching speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 4 A 55 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2.

2SC4460M-SV : www.DataSheet.co.kr Ordering number : EN7692A 2SC4460M-SV SANYO Semiconductors DATA SHEET 2SC4460M-SV Features • • • • • NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications High breakdown voltage, High reliability. High-speed switching. Wide ASO. Adoption of MBIT process. Micaless package facilitating mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg PW≤300µs, duty cycle≤10% Conditions Ratings 1000.

2SC4461 : Ordering number:EN3332 NPN Triple Diffused Planar Silicon Transistor 2SC4461 500V/25A Switching Regulator Applications Features · High breakdown voltage, high reliability. · Fast switching speed. · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2039D [2SC4461] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 2.8 2.0 1.0 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Symbol VCBO VCEO VEBO IC ICP IB PC Junction Temperature Storage Temperature Tj Ts.

2SC4462 : 2SC4462 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4462 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 25 4 20 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth pr.

2SC4463 : 2SC4463 Silicon NPN Epitaxial Application UHF frequency converter Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC4463 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 3 50 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Collector to emitter saturation voltage DC current transfer ratio Gain bandwidth pr.

2SC4466 : 2SC4466 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1693) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 120 V VCEO 80 V VEBO 6 V IC 6 A IB 3 A PC 60(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB VCB=120V VEB=6V IC=50mA VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IE=–0.5A VCB=10V, f=1MHz 10max 10max 80min 50min∗ 1.5max 20typ 110typ µA µA V V MHz pF ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (.

2SC4466 : ·With TO-3PN package ·Complement to type 2SA1693 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 80 6 6 3 60 150 -55~150 UNIT V V V A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless o.

2SC4466 : The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4466 is suitable for audio and general purpose, etc.  FEATURES * High DC current gain * High collector-base breakdown voltage  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC4466L-x-T3P-T 2SC4466G-x-T3P-T TO-3P Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE Packing Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 3 QW-R214-019.c 2SC4466 Preliminary NPN EPITAXIAL SILICON TR.

2SC4466 : ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1693 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 i.

2SC4467 : 2SC4467 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1694) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO 160 V VCEO 120 V VEBO IC IB PC Tj Tstg 6 V 8 A 3 A 80(Tc=25°C) W 150 °C –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=160V VEB=6V IC=50mA VCE=4V, IC=3A IC=3A, IB=0.3A VCE=12V, IE=–0.5A VCB=10V, f=1MHz Ratings 10max 10max 120min 50min∗ 1.5max 20typ 200typ Unit µA µA V V MHz pF ∗hFE Rank O(50 to100), P(70 to140), Y(90 to180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω.

2SC4467 : ·With TO-3PN package ·Complement to type 2SA1694 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 160 120 6 8 3 80 150 -55~150 UNIT V V V A A W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless .

2SC4467 : ·With TO-3PI package ·Complement to type 2SA1694 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PI) and symbol DESCRIPTION 1 2 3 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector CONDITIONS VALUE 160 120 6 8 3 UNIT V V V A A Tc=25℃ 80 150 W ¡æ ¡æ -55~150 Page 1/4 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datas.

2SC4467 : The UTC 2SC4467 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain and high collector-base breakdown voltage, etc. The UTC 2SC4467 is suitable for audio and general purpose, etc.  FEATURES * High DC current gain * High collector-base breakdown voltage  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC4467L-x-T3P-T 2SC4467G-x-T3P-T TO-3P 2SC4467L-x-T3N-T 2SC4467G-x-T3N-T TO-3PN Note: Pin Assignment: B: Base C: Collector E: Emitter Pin Assignment 123 BCE BCE Packing Tube Tube  MARKING www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R214-0.

2SC4467 : ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1694 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn 1 .




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