DatasheetsPDF.com

2SC3640

Part Number	2SC3640
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Spe...
Datasheet	2SC3640 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current- Pulse Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 140 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3640 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 V(BR)CBO Collecto...

Similar Datasheet

2SC3600 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC3601 PNP / NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SC3603 NPN EPITAXIAL SILICON TRANSISTOR - NEC
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR - NEC
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR - New Jersey Semi-Conductor
2SC3605 Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
2SC3606 Silicon NPN Transistor - Toshiba Semiconductor
2SC3606 NPN Transistors - Kexin
2SC3607 Silicon NPN Transistor - Toshiba Semiconductor
2SC3608 Transistor - ETC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)