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2SCR574D

Inchange Semiconductor
Part Number 2SCR574D
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 18, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)=0.3V(max)@(IC=1A...
Datasheet PDF File 2SCR574D PDF File

2SCR574D
2SCR574D

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Suitable for middle power drivers ·Low VCE(sat) VCE(sat)=0.
3V(max)@(IC=1A,IB=50mA) ·Complementary NPN types:2SAR574D ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SCR574D isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SCR574D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=100uA BVCEO Collector-Emitter breakdown voltage ...


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