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BS2100F

ROHM
Part Number BS2100F
Manufacturer ROHM
Description 600V High voltage High & Low-side / Gate Driver
Published Nov 19, 2016
Detailed Description 600V High voltage High & Low-side, Gate Driver BS2100F General Description The BS2100F is a monolithic high and low si...
Datasheet PDF File BS2100F PDF File

BS2100F
BS2100F

Overview
600V High voltage High & Low-side, Gate Driver BS2100F General Description The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation.
The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V.
The logic inputs can be used 3.
3V and 5.
0V.
The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.
Features  Floating Channels for Bootstrap Operation to +600V  Gate drive supply range from 10V to 18V  Built-in Under Voltage Lockout for Both Channels  3.
3V and 5.
0V Input Logic Compatible  Matched Propagation Delay for Both Channels  Output in phase with input Applications  MOSFET and IGBT high side driver applications Key Specifications  High-side floating supply voltage: 600V  Output voltage range: 10V to 18V  Min Output Current I...


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