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2SJ321

Hitachi
Part Number 2SJ321
Manufacturer Hitachi
Description Silicon P Channel MOS FET
Published Nov 20, 2016
Detailed Description 2SJ321 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File 2SJ321 PDF File

2SJ321
2SJ321

Overview
2SJ321 Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter • Avalanche ratings Outline TO-220CFM D 12 3 1.
Gate G 2.
Drain 3.
Source S November 1996 2SJ321 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C 3.
Value at Tch = 25°C, Rg ≥ 5...


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