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2N6213


Part Number 2N6213
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device perfor...
Features sc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6213 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -350 V V(BR)EBO Emitter-Base Breakdown Vlt...

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2N6211 : The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon PNP transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6211 275 225 2N6212 350 300 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N6213 400 350 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6211 2N6212 SYMBOL TEST.

2N6211 : ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -225V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier application for high-voltage operational amplifier, switching regulators, converters, inverters,deflection stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous -275 -225 -6 -2 ICM Collector Current-Peak -5 IB Collector Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 3.

2N6211 : TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature VCEO VCBO VEBO IB IC PT Top, Tstg 225 300 350 275 350 400 6.0 1.0 2.0 3.0 35 -55 to +200 Vdc Vdc Vdc Adc Adc W W 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance Junction-to-Case 1) Derate linearly 17.1 mW/0C for TA +250C 2) Derate linearly 200 mW/0C fo.

2N6212 : The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon PNP transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6211 275 225 2N6212 350 300 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N6213 400 350 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6211 2N6212 SYMBOL TEST.

2N6212 : _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~___ File No. 507 DDJ]3LJD Solid State Division Power Transistors 2N6211, 2N6212 2N6213, 2N6214 JEDEC TO-66 High-Voltage Medium-Power Silicon P-N-P Transistors For Switching and Amplifier Applications In Military, Industrial, and Commercial Equipment Features: • High voltage ratings: VCEO(sus) = -400 V max_ (2N6214) -350 V max_ (2N6213) -300 V max_ (2N6212) -225 V max_(2N6211) D Large safe-operating area • Complements to 2N3585 transistor family .. Thermal-cycling rating RCA types 2N6211, 2N6212, 2N6213, and 2N6214· are epitaxial silicon p-n-p transistors with high breakdown-voltage ratings and fast switching speeds. They are supp.

2N6212 : ·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous -350 -300 -6 -2 ICM Collector Current-Peak -5 IB Collector Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 35 TJ Junction Temperature 200 Tstg Storage Temperature Range -65~200 UNIT V V V A A A W ℃ ℃.

2N6212 : TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature VCEO VCBO VEBO IB IC PT Top, Tstg 225 300 350 275 350 400 6.0 1.0 2.0 3.0 35 -55 to +200 Vdc Vdc Vdc Adc Adc W W 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance Junction-to-Case 1) Derate linearly 17.1 mW/0C for TA +250C 2) Derate linearly 200 mW/0C fo.

2N6213 : The CENTRAL SEMICONDUCTOR 2N6211, 2N6212, and 2N6213 are silicon PNP transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6211 275 225 2N6212 350 300 6.0 2.0 5.0 1.0 35 -65 to +200 5.0 2N6213 400 350 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N6211 2N6212 SYMBOL TEST.

2N6213 : TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/461 Devices 2N6211 2N6212 2N6213 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N6211 2N6212 2N6213 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temperature VCEO VCBO VEBO IB IC PT Top, Tstg 225 300 350 275 350 400 6.0 1.0 2.0 3.0 35 -55 to +200 Vdc Vdc Vdc Adc Adc W W 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance Junction-to-Case 1) Derate linearly 17.1 mW/0C for TA +250C 2) Derate linearly 200 mW/0C fo.

2N6214 : _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _~___ File No. 507 DDJ]3LJD Solid State Division Power Transistors 2N6211, 2N6212 2N6213, 2N6214 JEDEC TO-66 High-Voltage Medium-Power Silicon P-N-P Transistors For Switching and Amplifier Applications In Military, Industrial, and Commercial Equipment Features: • High voltage ratings: VCEO(sus) = -400 V max_ (2N6214) -350 V max_ (2N6213) -300 V max_ (2N6212) -225 V max_(2N6211) D Large safe-operating area • Complements to 2N3585 transistor family .. Thermal-cycling rating RCA types 2N6211, 2N6212, 2N6213, and 2N6214· are epitaxial silicon p-n-p transistors with high breakdown-voltage ratings and fast switching speeds. They are supp.

2N6215 : 40 AMP NPN Sorted by IC, then VCEO Part Number mIaCx (A) 2N5968 2N6033 40 40 mVCaExO (V) 100 120 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 30 120 Note 1 1.2 Note 1 Note 1 220 TO-63 10 50 Note 1 1 Note 1 Note 1 140 TO-3 40 AMP PNP Sorted by IC, then VCEO Part Number mIaCx (A) 2N5969 40 mVCaExO (V) 100 Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 30 120 Note 1 1.8 Note 1 Note 1 220 TO-63 50 AMP NPN Sorted by IC, then VCEO Part Number .

2N6216 : ·With TO-3 package ·High current ,high power dissipation APPLICATIONS ·For use in switching and linear power applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6216 Collector-base voltage 2N6217 2N6216 VCEO VEBO IC PD Tj Tstg Collector-emitter voltage 2N6217 Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=100 Open collector Open base 140 7 10 71 150 -65~200 V A W Open emitter 180 150 V CONDITIONS VALUE 200 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.46 UNIT /W Sava.

2N6216 : ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear power and switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 200 V 150 V VEBO IC PC TJ Tstg Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=100℃ 71 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case.

2N6216 : 2N6216 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1 – Base TO3 (TO204AA) PINOUTS 2 – Emitter Case - Collector Bipolar NPN Device. VCEO = 150V IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. Parameter VCEO* IC(CONT) hFE ft PD Test Conditi.

2N6217 : ·With TO-3 package ·High current ,high power dissipation APPLICATIONS ·For use in switching and linear power applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N6216 Collector-base voltage 2N6217 2N6216 VCEO VEBO IC PD Tj Tstg Collector-emitter voltage 2N6217 Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=100 Open collector Open base 140 7 10 71 150 -65~200 V A W Open emitter 180 150 V CONDITIONS VALUE 200 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.46 UNIT /W Sava.

2N6217 : ·With TO-3 package ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for linear power and switching amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 180 V 140 V VEBO IC PC TJ Tstg Emitter-Base Voltage 7 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=100℃ 71 W Junction Temperature 150 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case.




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