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2N6235

Part Number	2N6235
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 20, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) ·DC Cur...
Datasheet	2N6235 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) ·DC Current Gain- : hFE = 25-125@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.
5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f for high-voltage medium power and switching reguators applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A PC Collector...

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