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IDK09G65C5

Infineon
Part Number IDK09G65C5
Manufacturer Infineon
Description Silicon Carbide Diode
Published Nov 21, 2016
Detailed Description SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK09G65C5 Final Datasheet Rev. 2.1, 2017-08-1...
Datasheet PDF File IDK09G65C5 PDF File

IDK09G65C5
IDK09G65C5

Overview
SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDK09G65C5 Final Datasheet Rev.
2.
1, 2017-08-11 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology.
The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Features  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature...


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