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2N3171

Part Number	2N3171
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 22, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VC...
Datasheet	2N3171 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.
75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·All semelab hermetically sealed products,can be processed in accordance with the requirements of BS,CECC,and JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -3 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.
67 ℃/W 2N3171 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL ...

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