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2N3186

Part Number	2N3186
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 22, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturatio...
Datasheet	2N3186 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·With TO-3 package ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For medium-speed switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -5 A PC Collector Power Dissipation@TC=25℃ 75 W TJ, Tstg Operating and Storage Junction Temperature Range -65~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-...

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