DatasheetsPDF.com

PTFB201402FC

Part Number	PTFB201402FC
Manufacturer	Infineon
Description	High Power RF LDMOS Field Effect Transistor
Published	Nov 27, 2016
Detailed Description	PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC int...
Datasheet	PTFB201402FC PDF File

Overview

PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package.
It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz frequency band.
Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.
PTFB201402FC Package H-37248-4 Power Gain (dB) Input Return Loss (dB) Small Signal CW Gain & Input Return Loss, single side VDD = 28 V, IDQ = 650 mA 21.
0 20.
5 20.
0 19.
5 19.
0 18.
5 18.
0 17.
5 17.
0 16.
5 16.
0 1800 Gain IRL 1900 2000 2100 Frequency (MHz) 0 -2 -4 -6 -8 -10...

Similar Datasheet

PTFB201402FC High Power RF LDMOS Field Effect Transistor - Infineon
PTFB201402FC High Power RF LDMOS Field Effect Transistor - Wolfspeed

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)