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PTFB212507SH

Part Number	PTFB212507SH
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a...
Datasheet	PTFB212507SH PDF File

Overview

PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110 to 2170 MHz frequency band.
Features include input and output matching, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFB212507SH Package H-37288G-4/2 IMD (dBc) Drain Efficiency (%) Single-carrier WCDMA, 3GPP Drive-up VDD = 28 V, IDQ = 1.
6 A, ƒ = 2170 MHz 3GPP WCDMA, PAR = 7.
5 dB, BW 3.
84 MHz -15 -20 IMD Low -25 IMD Up -30...

Similar Datasheet

PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET - Infineon

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