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PTFB213004F

Part Number	PTFB213004F
Manufacturer	Infineon
Description	High Power RF LDMOS Field Effect Transistor
Published	Nov 27, 2016
Detailed Description	PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-wa...
Datasheet	PTFB213004F PDF File

Overview

PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band.
Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package.
PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.
4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.
5 dB, 3.
84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up 38 42 46 50 Output Power, avg.
(dBm) 20 10 0 54 Features • Broadband internal ma...

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PTFB213004F High Power RF LDMOS Field Effect Transistor - Infineon

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