DatasheetsPDF.com

PTFC270051M

Part Number	PTFC270051M
Manufacturer	Infineon
Description	High Power RF LDMOS Field Effect Transistor
Published	Nov 27, 2016
Detailed Description	PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an un...
Datasheet	PTFC270051M PDF File

Overview

PTFC270051M High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 – 2700 MHz Description The PTFC270051M is an unmatched 5-watt LDMOS FET suitable for power ampliﬁer applications with frequencies from 900 MHz to 2700 MHz.
This LDMOS transistor offers excellent gain, efﬁciency and linearity performance in a small overmolded plastic package.
PTFC270051M Package PG-SON-10 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 65 mA 3GPP WCDMA signal, 8 dB PAR, 10 MHz carrier spacing, 3.
84 MHz BW 22 Gain 21 60 50 20 40 19 30 18 Efficiency 17 2110 MHz 2140 MHz 2170 MHz 20 10 16 c270051m-gr1.
3 0 22 24 26 28 30 32 34 36 38 40 Output Power (dBm) Features • ...

Similar Datasheet

PTFC270051M High Power RF LDMOS Field Effect Transistor - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)