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PTVA035002EV

Part Number	PTVA035002EV
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS ...
Datasheet	PTVA035002EV PDF File

Overview

PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.
5 A, 12 µsec pulse width, 10% duty cycle 22 85 20 Gain 18 75 65 16 55 14 Efficiency 12 45 35 10 48 a035002 gr 1 25 50 52 54 56 58 60 Output Power (dBm) Features • Unmatched input and output • High gain and efficiency • Integrated ESD protection • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) • Low thermal resistance • Pb-free and RoHS-compliant • Capable of withstanding a 13:1 load mismatch at 57 dBm under p...

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PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET - Infineon

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