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PXAC201602FC

Part Number	PXAC201602FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The ...
Datasheet	PXAC201602FC PDF File

Overview

PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz Description The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands.
It features input and output matching, and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC201602FC Package H-37248-4 Gain (dB), Peak/Average Ratio Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 1880 MHz 3GPP WCDMA signal: 10 dB PAR, 3.
84 MHz BW 24 6...

Similar Datasheet

PXAC201602FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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