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PXAC260602FC

Part Number	PXAC260602FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602...
Datasheet	PXAC260602FC PDF File

Overview

PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET 60 W, P3dB @ 28 V, 2620 – 2690 MHz Description The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 2620 to 2690 MHz frequency band.
Features include dual-path design, high gain and thermally-enhanced package with earless flanges.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Gain (dB) Drain Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 85 mA, VGS = 2.
62V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
84 MHz 17 Gai...

Similar Datasheet

PXAC260602FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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