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CHA5266-99F

United Monolithic Semiconductors
Part Number CHA5266-99F
Manufacturer United Monolithic Semiconductors
Description 10-16 GHz Medium Power Amplifier
Published Nov 28, 2016
Detailed Description CHA5266-99F 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5266-99F is a three stage...
Datasheet PDF File CHA5266-99F PDF File

CHA5266-99F
CHA5266-99F

Overview
CHA5266-99F 10-16 GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5266-99F is a three stage monolithic GaAs Medium Power Amplifier that produces 23dB linear gain and 36dBm OIP3.
It is designed for a wide range of applications, from military to commercial communication systems.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features ■ Broadband performances: 10-16GHz.
■ 23dB Linear Gain.
■ 26.
5dBm output power @ 1dB comp.
■ 36dBm OIP3.
■ DC bias: Vd=5.
0Volt@Id=360mA.
■ Chip size 1.
81x1.
37x0.
1mm.
Gain and retun losses (dB) RF IN VD1 VD2 VD3 RF OUT VG1 VG2 VG3 30 25 20 S21 15 S11 10 S22 5 0 -5 -10 -15 -20 -25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Frequency (GHz) Main Electrical Characteristics Tamb.
= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output IP3 Pout Output...


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