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CHZ180A-SEB

United Monolithic Semiconductors
Part Number CHZ180A-SEB
Manufacturer United Monolithic Semiconductors
Description 180W L-Band HPA
Published Nov 28, 2016
Detailed Description CHZ180A-SEB 180W L-Band HPA GaN HEMT on SiC in SEB Package Description The CHZ180A-SEB is an input matched and output p...
Datasheet PDF File CHZ180A-SEB PDF File

CHZ180A-SEB
CHZ180A-SEB

Overview
CHZ180A-SEB 180W L-Band HPA GaN HEMT on SiC in SEB Package Description The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor.
It allows broadband solutions for a variety of RF power applications in L-band.
It is well suited for pulsed radar application.
The CHZ180A-SEB is proposed on a 0.
5µm gate length GaN HEMT process.
It is based on Quasi-MMIC technology.
It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.
Main Features ■ Wide band capability: 1.
2 – 1.
4GHz ■ Pulsed operating mode ■ High power: > 180W ■ High PAE: up to 53% ■ DC bias: VDS = 45V @ ID_Q = 1.
3A ■ MTTF > 106 hours @ Tj = 200°C ■ RoHS Hermetic Flange Ceramic package Pout(dBm) & PAE(%) Power Gain (dB) VDS = 45V, ID_Q = 1.
3A, Pin = 39dBm Pulsed mode (100µs-10%) 60 25 58 Pulsed Mode 24 56 54 POUT 23 22 52 21 50 20 48 46 PAE 19 18 44 17 42 16 40 15 38 Gain 14 ...


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