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BD550B

Part Number	BD550B
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Nov 29, 2016
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)...
Datasheet	BD550B PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION High Power Dissipation ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as either driver or output unit applications in audio amplifier circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO VCER VCEO Collector-Base Voltage Collector-Emitter Voltage RBE= 100Ω Collector-Emitter Voltage 275 V 275 V 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ BD550B · isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Volta...

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