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AUIRF7341Q

Infineon
Part Number AUIRF7341Q
Manufacturer Infineon
Description Dual N-Channel MOSFET
Published Dec 1, 2016
Detailed Description   AUTOMOTIVE GRADE AUIRF7341Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Driv...
Datasheet PDF File AUIRF7341Q PDF File

AUIRF7341Q
AUIRF7341Q


Overview
  AUTOMOTIVE GRADE AUIRF7341Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dual N Channel MOSFET  Surface Mount  Available in Tape & Reel  175°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified *   S1 G1 S2 G2 1 2 3 4 8 D1 7 D1 6 D2 5 D2 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capa...


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