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2EDN7524G

Infineon
Part Number 2EDN7524G
Manufacturer Infineon
Description EiceDRIVER MOSFET
Published Dec 3, 2016
Detailed Description EiceDRIVER™ 2EDN752x / 2EDN852x Features Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns f...
Datasheet PDF File 2EDN7524G PDF File

2EDN7524G
2EDN7524G

Overview
EiceDRIVER™ 2EDN752x / 2EDN852x Features Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels in parallel • Two independent 5 A channels enable numerous deployment options • Industry standard packages and pinout ease system-design upgrades The new Reference in Ruggedness • 4.
2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal conditions • -10 V control and enable input robustness delivers crucial safety margin when driving pulse-transformers or driving MOSFETs in through hole packaging • 5 A reverse current robustness eliminates the need for output protection circuitry.
Typical Applications • Server SMPS • TeleCom SMPS • DC-to-DC Converter • Bricks • Power Tools • Industrial SMPS • Motor Control • Solar SMPS Example Topologies • Single and interleaved PFC • LLC, ZVS with pulse transformer • Synchronous Rectification Description The 2EDN752x/2EDN852x is an advanced dual-channel driver.
It is suited to drive logic and normal level MOSFETs and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and GaN Power devices.
Data Sheet Please read the Important Notice and Warnings at the end of this document www.
infineon.
com Rev.
2.
6 2021-07-23 EiceDRIVER™ 2EDN752x / 2EDN852x Features The control and enable inputs are LV-TTL compatible (CMOS 3.
3 V) with an input voltage range from -5 V to +20 V.
-10 V input pin robustness protects the driver against latch-up or electrical overstress which can be induced by parasitic ground inductances.
This greatly enhances system stability.
4.
2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET and GaN protection under abnormal conditions.
Under such circumstances, this UVLO mechanism provides crucial independence from whether and when ...


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