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BSC0910NDI

Part Number	BSC0910NDI
Manufacturer	Infineon
Description	Dual N-Channel OptiMOS MOSFET
Published	Dec 5, 2016
Detailed Description	Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performa...
Datasheet	BSC0910NDI PDF File

Overview

Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.
5V rated) VDS RDS(on),max • 100% avalanche tested ID • Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.
5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 VPhase • Integrated monolithic Schottky-like diode BSC0910NDI Q1 Q2 25 25 V 4.
6 1.
2 mW 5.
9 1.
6 40 40 A Type BSC0910NDI Package PG-TISON-8 Marking 0910NDI Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Symbol Conditions Continuous drain current I D T C=70 °C, V GS=10 V T A=25 °C, V GS=4.
5 V3) ...

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BSC0910NDI Dual N-Channel OptiMOS MOSFET - Infineon

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