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BSC0925ND

Infineon
Part Number BSC0925ND
Manufacturer Infineon
Description Power-MOSFET
Published Dec 5, 2016
Detailed Description OptiMOSTM Power-MOSFET Features • Dual N-channel OptiMOS™ MOSFET • Optimized for clean switching • 100% avalanche tested...
Datasheet PDF File BSC0925ND PDF File

BSC0925ND
BSC0925ND

Overview
OptiMOSTM Power-MOSFET Features • Dual N-channel OptiMOS™ MOSFET • Optimized for clean switching • 100% avalanche tested • Superior thermal resistance • Optimized for high performance Buck converter • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 BSC0925ND Product Summary VDS RDS(on),max ID QOSS QG(0V.
.
10V) 30 5 40 8.
6 13 V mW A nC nC VPhase Type BSC0925ND Package PG-TISON-8 Marking 0925ND Maximum ratings, at T j=25 °C, unless otherwise specified2) Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 40 A V GS=4.
5 V, T A=25 °C3) 15 V GS=4.
5 V, T A=70 °C3) 12 Pulsed drain current5) I D,pulse V GS=10 V, T A=25 °C4) T C=25 °C 11 160 Avalanche energy, single pulse E AS I D=20 A, R GS=25 W 14 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) One transistor active 3) Device on 40 mm x 40 mm x 1.
5 mm epo...


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