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BSC159N10LSFG

Infineon
Part Number BSC159N10LSFG
Manufacturer Infineon
Description Power-MOSFET
Published Dec 5, 2016
Detailed Description BSC159N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (...
Datasheet PDF File BSC159N10LSFG PDF File

BSC159N10LSFG
BSC159N10LSFG

Overview
BSC159N10LSF G OptiMOS™2 Power-Transistor Features • N-channel, logic level • Very low gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature Product Summary V DS R DS(on),max ID 100 V 15.
9 mΩ 63 A PG-TDSON-8 • Pb-free lead plating; RoHS compliant; Halogen Free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type BSC159N10LSF G Package PG-TDSON-8 Marking 159N10LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W2) Pulsed drain current3) Avalanche energy, single pulse Gate source voltage I D,pulse E AS V GS T C=25 °C I D=50 A, R GS=25 Ω Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 63 40 9.
4 252 ...


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