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CS100N03FB9

Part Number	CS100N03FB9
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS100N03F B9 ○R General Description： CS100N03F B9, the silicon N-channel Enhanced VDMOS...
Datasheet	CS100N03FB9 PDF File

Overview

Silicon N-Channel Power MOSFET CS100N03F B9 ○R General Description： CS100N03F B9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 30 100 40 4.
0 switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Trench FET Power MOSFET l Low ON Resistance(Rdson≤5.
3mΩ) l Low Gate Charge (Typical Data:68nC) l Low Reverse transfer capacitances(Typical:300pF) l 100% Single Pulse avalanche energy Test Applications： UPS,DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID I D a1 M VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 10...

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CS100N03FB9 Silicon N-Channel Power MOSFET - Huajing Microelectronics

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