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CS60N04A4

Huajing Microelectronics
Part Number CS60N04A4
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Trench MOSFET CS60N04 A4 ○R General Description： CS60N04A4,the silicon N-channel Enhanced VDMOSFETs,...
Datasheet PDF File CS60N04A4 PDF File

CS60N04A4
CS60N04A4

Overview
Silicon N-Channel Trench MOSFET CS60N04 A4 ○R General Description： CS60N04A4,the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced trench Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features： l Rds(on) =8.
5mΩ @VGS=10V , ID=60A l High Performance Trench Technology for extremely lows rdson l High Power and Current Handing Capability l 100% Avalanche Energy Test l 40V@ TJ =150° VDSS 40 V ID 60 A PD(TC=25℃) 52 W RDS(ON)Typ 8.
5 mΩ Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Curr...


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