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CS10N50A8R

Huajing Microelectronics
Part Number CS10N50A8R
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS10N50 A8R ○R General Description： CS10N50 A8R, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS10N50A8R PDF File

CS10N50A8R
CS10N50A8R

Overview
Silicon N-Channel Power MOSFET CS10N50 A8R ○R General Description： CS10N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
Features： l Fast Switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 10 130 0.
5 l Low ON Resistance(Rdson≤0.
75Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:8.
4pF) l 100% Single Pulse avalanche energy Test Applicati...


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