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CS10N50FA9R

Huajing Microelectronics
Part Number CS10N50FA9R
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS10N50F A9R ○R General Description： CS10N50F A9R, the silicon N-channel Enhanced VDM...
Datasheet PDF File CS10N50FA9R PDF File

CS10N50FA9R
CS10N50FA9R

Overview
Silicon N-Channel Power MOSFET CS10N50F A9R ○R General Description： CS10N50F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤0.
75Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:8.
4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche...


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