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CS7N80FA9

Part Number	CS7N80FA9
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS7N80F A9 ○R General Description： CS7N80F A9, the silicon N-channel Enhanced VDMOSFETs...
Datasheet	CS7N80FA9 PDF File

Overview

Silicon N-Channel Power MOSFET CS7N80F A9 ○R General Description： CS7N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
VDSS ID PD(TC=25℃) RDS(ON)Typ 800 V 7A 48 W 1.
5 Ω Features： l Fast Switching l Low ON Resistance(Rdson≤1.
8Ω ) l Low Gate Charge (Typical Data:34nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： ATX Power、LED Power.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-S...

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CS7N80FA9 Silicon N-Channel Power MOSFET - Huajing Microelectronics

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