DatasheetsPDF.com

CS2N80A3HY

Huajing Microelectronics
Part Number CS2N80A3HY
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS2N80 A3HY ○R General Description： VDSS 800 V CS2N80 A3HY, the silicon N-channel En...
Datasheet PDF File CS2N80A3HY PDF File

CS2N80A3HY
CS2N80A3HY

Overview
Silicon N-Channel Power MOSFET CS2N80 A3HY ○R General Description： VDSS 800 V CS2N80 A3HY, the silicon N-channel Enhanced ID 2.
0 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 40 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.
8 Ω performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
.
Features： l Fast Switching l Low Gate Charge (Typical Data:12nC) l Low Reverse transfer capacitances(Typical:4.
0pF) l 100% Single Pulse avalanche energy Test Applications： Power swi...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)