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CS3N70A3H-G

Part Number	CS3N70A3H-G
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS3N70 A3H-G ○R General Description： VDSS 700 V CS3N70 A3H-G the silicon N-channel E...
Datasheet	CS3N70A3H-G PDF File

Overview

Silicon N-Channel Power MOSFET CS3N70 A3H-G ○R General Description： VDSS 700 V CS3N70 A3H-G the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 55 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.
8 Ω performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
.
Features： l Fast Switching l Low ON Resistance(Rdson≤4.
2 Ω) l Low Gate Charge (Typical Data:11nC) l Low Reverse transfer capacitances(Typical:5pF) l 100% Single Pulse avalanche energy ...

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CS3N70A3H-G Silicon N-Channel Power MOSFET - Huajing Microelectronics

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