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CS1N65B3

Part Number	CS1N65B3
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS1N65 B3 ○R General Description： CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, ...
Datasheet	CS1N65B3 PDF File

Overview

Silicon N-Channel Power MOSFET CS1N65 B3 ○R General Description： CS1N65 B3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 650 1.
5 32 8.
5 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤9.
5Ω) l Low Gate Charge (Typical Data:5.
3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applications：...

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