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CS16N60A8H

Huajing Microelectronics
Part Number CS16N60A8H
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS16N60 A8H ○R General Description： CS16N60 A8, the silicon N-channel Enhanced VDMOSFET...
Datasheet PDF File CS16N60A8H PDF File

CS16N60A8H
CS16N60A8H

Overview
Silicon N-Channel Power MOSFET CS16N60 A8H ○R General Description： CS16N60 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 600 16 180 0.
41 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220AB, which accords with the RoHS standard.
.
Features： l Fast Switching l Low ON Resistance(Rdson≤0.
5Ω) l Low Gate Charge (Typical Data:54nC) l Low Reverse transfer capacitances(Typical: 18.
5pF) l 100% Single Pulse avalanche energy Test Appl...


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