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CS4N60FA9TDY

Part Number	CS4N60FA9TDY
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS4N60F A9TDY ○R General Description： CS4N60F A9TDY, the silicon N-channel Enhanced V...
Datasheet	CS4N60FA9TDY PDF File

Overview

Silicon N-Channel Power MOSFET CS4N60F A9TDY ○R General Description： CS4N60F A9TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 13nC) l Low Reverse transfer capacitances(Typical: 2.
2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage S...

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CS4N60FA9TDY Silicon N-Channel Power MOSFET - Huajing Microelectronics

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