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CS1N60B1R

Huajing Microelectronics
Part Number CS1N60B1R
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS1N60 B1R ○R General Description： CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs...
Datasheet PDF File CS1N60B1R PDF File

CS1N60B1R
CS1N60B1R

Overview
Silicon N-Channel Power MOSFET CS1N60 B1R ○R General Description： CS1N60 B1R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.
5 3 7 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-92, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤8Ω) l Low Gate Charge (Typical Data:5.
2nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applications： Pow...


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