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CS830FA9RD

Part Number	CS830FA9RD
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS830F A9RD ○R General Description： CS830F A9RD, the silicon N-channel Enhanced VDMOS...
Datasheet	CS830FA9RD PDF File

Overview

Silicon N-Channel Power MOSFET CS830F A9RD ○R General Description： CS830F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.
5nC) l Low Reverse transfer capacitances(Typical:7.
5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and char...

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CS830FA9RD Silicon N-Channel Power MOSFET - Huajing Microelectronics

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