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CS830A3RD

Huajing Microelectronics
Part Number CS830A3RD
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS830 A3RD ○R General Description: CS830 A3RD, the silicon N-channel Enhanced VDMOSFE...
Datasheet PDF File CS830A3RD PDF File

CS830A3RD
CS830A3RD


Overview
Silicon N-Channel Power MOSFET CS830 A3RD ○R General Description: CS830 A3RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features: l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 14.
5nC) l Low Reverse transfer capacitances(Typical:7.
5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger...



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