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CS3R50FA9

Huajing Microelectronics
Part Number CS3R50FA9
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS3R50F A9 ○R General Description： VDSS 500 V CS3R50F A9, the silicon N-channel Enha...
Datasheet PDF File CS3R50FA9 PDF File

CS3R50FA9
CS3R50FA9

Overview
Silicon N-Channel Power MOSFET CS3R50F A9 ○R General Description： VDSS 500 V CS3R50F A9, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 24 W which reduce the conduction loss, improve switching RDS(ON)Typ 2.
4 Ω performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-220F, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤3.
0Ω) l Low Gate Charge (Typical Data:8.
5nC) l Low Reverse transfer capacitances(Typical:4.
5pF) l 100% Single Pulse avalanche energy T...


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