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CS3N50B3HY

Huajing Microelectronics
Part Number CS3N50B3HY
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS3N50 B3HY ○R General Description： VDSS 500 V CS3N50 B3HY, the silicon N-channel En...
Datasheet PDF File CS3N50B3HY PDF File

CS3N50B3HY
CS3N50B3HY

Overview
Silicon N-Channel Power MOSFET CS3N50 B3HY ○R General Description： VDSS 500 V CS3N50 B3HY, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar PD (TC=25℃) 35 W Technology which reduce the conduction loss, improve RDS(ON)Typ 2.
4 Ω switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤3.
0Ω) l Low Gate Charge (Typical Data:8.
5nC) l Low Reverse transfer capacitances(Typical:4.
5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.
Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Curren...


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