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BT40N60BNF

Part Number	BT40N60BNF
Manufacturer	Huajing Microelectronics
Description	Silicon FS Planar IGBT
Published	Dec 6, 2016
Detailed Description	Silicon FS Planar IGBT BT40N60BNF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS te...
Datasheet	BT40N60BNF PDF File

Overview

Silicon FS Planar IGBT BT40N60BNF ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot （TC=25℃） VCE(SAT) 600 40 312 2.
2 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
2V @ IC = 40A and TC = 25°C l Extremely enhanced avalanche capability Applications： Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage IC ICMa1 IF Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C IFM Diode Maximum Forward Current Power Dissipation @ TC = 25°C PD Power Dissipation @TC = 100 °C TJ，Tstg Operating Junction and Storage Temperatur...

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BT40N60BNF Silicon FS Planar IGBT - Huajing Microelectronics

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